Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15814824Application Date: 2017-11-16
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Publication No.: US10347641B2Publication Date: 2019-07-09
- Inventor: Jihoon Kim , Wonchul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0066259 20170529
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02

Abstract:
A semiconductor device includes a substrate including a cell region and peripheral region and bottom electrodes on the substrate. The bottom electrodes are arranged in a first row and a second row each extending in a first direction. The first row and the second row are adjacent to each other in a second direction perpendicular to the first direction. The bottom electrodes in the first row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a first distance in the first direction. The bottom electrodes in the second row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a second distance in the first direction. The outermost bottom electrode in the first row is on the peripheral region of the substrate. The outermost bottom electrode in the second row is on the cell region of the substrate.
Public/Granted literature
- US20180342519A1 SEMICONDUCTOR DEVICES Public/Granted day:2018-11-29
Information query
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