Invention Grant
- Patent Title: Array substrate and method of forming the same
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Application No.: US15023379Application Date: 2016-02-25
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Publication No.: US10304860B2Publication Date: 2019-05-28
- Inventor: Chunqian Zhang , Chao Wang , Jingfeng Xue
- Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Wuhan, Hubei
- Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Wuhan, Hubei
- Agent Andrew C. Cheng
- Priority: CN201610015061 20160111
- International Application: PCT/CN2016/074527 WO 20160225
- International Announcement: WO2017/121012 WO 20170720
- Main IPC: H01L21/77
- IPC: H01L21/77 ; H01L27/12 ; G02F1/1362 ; G02F1/1368 ; H01L29/417 ; G02F1/1345

Abstract:
An array substrate includes a substrate, a buffer layer, a first shielding pattern, a passivation layer, a first semiconductor pattern, a gate insulating layer, a first gate pattern, an interlayer insulating layer, and two first source/drain electrode patterns. A first through hole and a second through hole are arranged on the array substrate. One of the first source/drain electrode patterns is electrically connected to the first semiconductor pattern and the first shielding pattern through the first through hole. The other one of the first source/drain electrode patterns is electrically connected to the first semiconductor pattern through the second through hole and is insulated from the first shielding pattern. The present invention where the array substrate and the method of forming the array substrate are proposed is related to a top-gate design. The driving ability of the TFT driving circuit still improves without increasing the original processes and production costs.
Public/Granted literature
- US20180040632A1 Array Substrate and Method of Forming the Same Public/Granted day:2018-02-08
Information query
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