A method for etching an etch layer formed on a front side of a wafer and a wafer etching apparatus are provided. The wafer etching apparatus includes a first flow channel, a temperature-regulating module, and a second flow channel. The first flow channel is configured to carry a preheated/precooled liquid for controlling a temperature of a wafer. The temperature-regulating module is coupled to the first flow channel. The temperature-regulating module is configured to control a temperature of the liquid in the first flow channel. The second flow channel is configured to carry an etchant for etching an etch layer formed on a front side of the wafer. The method includes: controlling the temperature of the wafer by using the preheated/precooled liquid; and etching the etch layer with the etchant.