发明授权
- 专利标题: Package with metal-insulator-metal capacitor and method of manufacturing the same
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申请号: US15937188申请日: 2018-03-27
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公开(公告)号: US10276484B2公开(公告)日: 2019-04-30
- 发明人: Shuo-Mao Chen , Der-Chyang Yeh , Chiung-Han Yeh
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/56 ; H01L23/00 ; H01L23/538 ; H01L23/31
摘要:
A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.
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