A thin film transistor comprises an active layer; a light-protection layer disposed above the active layer and/or disposed beneath the active layer, the light-protection layer being configured to absorb light having a predetermined wavelength. By providing a light-protection layer above the active layer, light incident onto the channel region from top of the thin film transistor can be absorbed, while by providing a light-protection layer under the active layer, light incident onto the channel region from bottom of the thin film transistor can be absorbed, thereby effectively avoiding influence of light on the active layer of the channel region and ensuring a relatively strong light stability of the driving transistor in the thin film transistor. A method for manufacturing a thin film transistor and an array substrate comprising the thin film transistor as well as an array substrate and a display device comprising the thin film transistor are further provided.