- 专利标题: Hollow cathode ion source
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申请号: US14975286申请日: 2015-12-18
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公开(公告)号: US10242846B2公开(公告)日: 2019-03-26
- 发明人: John Chambers , Peter Maschwitz
- 申请人: AGC Flat Glass North America, Inc. , Asahi Glass Co., Ltd. , AGC Glass Europe
- 申请人地址: US GA Alpharetta JP Tokyo BE Louvain-la Neuve
- 专利权人: AGC FLAT GLASS NORTH AMERICA, INC.,ASAHI GLASS CO., LTD.,AGC GLASS EUROPE
- 当前专利权人: AGC FLAT GLASS NORTH AMERICA, INC.,ASAHI GLASS CO., LTD.,AGC GLASS EUROPE
- 当前专利权人地址: US GA Alpharetta JP Tokyo BE Louvain-la Neuve
- 代理机构: Rothwell, Figg, Ernst & Manbeck, P.C.
- 主分类号: H01J37/08
- IPC分类号: H01J37/08 ; H01J37/32
摘要:
An ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice. The first and second hollow cathodes are disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The first hollow cathode and the second hollow cathode are configured to alternatively function as electrode and counter-electrode to generate a plasma. Each of the first ion acceleration cavity and the second ion acceleration cavity are sufficient to enable the extraction and acceleration of ions.
公开/授权文献
- US20170178869A1 HOLLOW CATHODE ION SOURCE 公开/授权日:2017-06-22
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