- 专利标题： Semiconductor image sensing device and manufacturing method thereof
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申请号： US14583433申请日： 2014-12-26
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公开(公告)号： US10204959B2公开(公告)日： 2019-02-12
- 发明人: Chien-Chang Huang , Li-Ming Sun , Chien Nan Tu , Yi-Ping Pan , Yu-Lung Yeh
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.
公开/授权文献
- US20150287761A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2015-10-08
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