Invention Grant
- Patent Title: Plasma source
-
Application No.: US15902009Application Date: 2018-02-22
-
Publication No.: US10199201B2Publication Date: 2019-02-05
- Inventor: Hideki Fujita , Suguru Itoi
- Applicant: NISSIN ION EQUIPMENT CO., LTD.
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee: NISSIN ION EQUIPMENT CO., LTD.
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Agency: Sughrue Mion, PLLC
- Priority: JP2017-123084 20170623
- Main IPC: H05B31/26
- IPC: H05B31/26 ; H01J37/317 ; H01J37/32

Abstract:
A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.
Public/Granted literature
- US20180374676A1 PLASMA SOURCE Public/Granted day:2018-12-27
Information query