- 专利标题： Structure and method to prevent EPI short between trenches in FinFET eDRAM
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申请号： US15691182申请日： 2017-08-30
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公开(公告)号： US10177154B2公开(公告)日： 2019-01-08
- 发明人: Michael V. Aquilino , Veeraraghavan S. Basker , Kangguo Cheng , Gregory Costrini , Ali Khakifirooz , Byeong Y. Kim , William L. Nicoll , Ravikumar Ramachandran , Reinaldo A. Vega , Hanfei Wang , Xinhui Wang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven J. Meyers
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L27/108 ; H01L27/12 ; H01L27/08
摘要：
After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.
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