- 专利标题: Method for compensation of manufacturing tolerances of at least one electric parameter of a power transistor and associated system
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申请号: US13834301申请日: 2013-03-15
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公开(公告)号: US10135433B2公开(公告)日: 2018-11-20
- 发明人: Stephane Richard , Herve Cara , Jean-Marc Nicolai
- 申请人: GE ENERGY POWER CONVERSION TECHNOLOGY LTD.
- 申请人地址: GB Warwickshire
- 专利权人: GE ENERGY POWER CONVERSION TECHNOLOGY LTD.
- 当前专利权人: GE ENERGY POWER CONVERSION TECHNOLOGY LTD.
- 当前专利权人地址: GB Warwickshire
- 代理机构: Wood IP LLC
- 优先权: FR1252392 20120316
- 主分类号: H03K17/14
- IPC分类号: H03K17/14 ; H03K17/10
摘要:
The system (21) includes: a power transistor (22), a data medium (60) including data relating to the manufacturing tolerance (Tol) of at least one electric parameter of the transistor (22), an electric circuit (26) for controlling the transistor adapted so as to operate for a reference value of the parameter (VREF), an electric circuit (64) having an inductance of less than 100 nH and such that the assembly (70) formed with the circuit (64) and the transistor (22) has a value for the parameter, for which the deviation in absolute with the reference value is strictly less than the manufacturing tolerance (Tol).
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