- 专利标题: Semiconductor device
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申请号: US15491875申请日: 2017-04-19
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公开(公告)号: US10135337B2公开(公告)日: 2018-11-20
- 发明人: Ryohei Nega , Yoshinao Miura
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Shapiro, Gabor and Rosenberger, PLLC
- 优先权: JP2012-233481 20121023
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H02M3/158 ; H02M1/34 ; H01L29/205 ; H01L23/498 ; H01L29/20 ; H01L29/423

摘要:
Provided is a semiconductor device including a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
公开/授权文献
- US20170222559A1 SEMICONDUCTOR DEVICE 公开/授权日:2017-08-03
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