- 专利标题： Resist composition and patterning process
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申请号： US14836081申请日： 2015-08-26
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公开(公告)号： US10131730B2公开(公告)日： 2018-11-20
- 发明人: Takayuki Fujiwara , Masayoshi Sagehashi , Koji Hasegawa , Kenichi Oikawa
- 申请人： SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2014-179953 20140904
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/038 ; G03F7/30 ; G03F7/32 ; C08F220/18 ; C08F224/00 ; G03F7/004
摘要：
A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.
公开/授权文献
- US20160152755A1 RESIST COMPOSITION AND PATTERNING PROCESS 公开/授权日：2016-06-02
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