- 专利标题： DRAM and method for operating the same
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申请号： US15808448申请日： 2017-11-09
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公开(公告)号： US10127967B1公开(公告)日： 2018-11-13
- 发明人: Chung-Hsun Lee , Hsien-Wen Liu
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW New Taipei
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C11/403 ; G11C11/4096
摘要：
The present disclosure provides a dynamic random access memory (DRAM). The DRAM includes a refresh unit and an accessing device. The refresh unit includes a target row on which a read/write (R/W) operation is requested to be performed. The accessing device is configured to perform the R/W operation on the target row while the refresh unit is being refreshed.
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