- 专利标题： Method of manufacturing interposer-based damping resistor
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申请号： US13436150申请日： 2012-03-30
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公开(公告)号： US10074600B2公开(公告)日： 2018-09-11
- 发明人: Fei Guo , Feng Zhu , Julius Din , Anwar Kashem , Sally Yeung
- 申请人： Fei Guo , Feng Zhu , Julius Din , Anwar Kashem , Sally Yeung
- 申请人地址： CA Markham US CA Santa Clara
- 专利权人： ATI Technologies ULC,Advanced Micro Devices, Inc.
- 当前专利权人： ATI Technologies ULC,Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Markham US CA Santa Clara
- 代理商 Timothy M. Honeycutt
- 主分类号： H01C17/00
- IPC分类号： H01C17/00 ; H01L23/498 ; H01L23/14 ; H01L23/50
摘要：
Various resistor circuits and methods of making and using the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a resistor onboard an interposer. The resistor is adapted to dampen a capacitive network. The capacitive network has at least one capacitor positioned external to the interposer.
公开/授权文献
- US20130258627A1 INTERPOSER-BASED DAMPING RESISTOR 公开/授权日：2013-10-03
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