- 专利标题: Bonding wire-type heat sink structure for semiconductor devices
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申请号: US15459915申请日: 2017-03-15
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公开(公告)号: US10074587B2公开(公告)日: 2018-09-11
- 发明人: Hsiao-Tsung Yen , Chih-Yu Tsai , Cheng-Wei Luo
- 申请人: REALTEK SEMICONDUCTOR CORPORATION
- 申请人地址: TW Hsinchu
- 专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT, PC
- 优先权: TW105108252A 20160317
- 主分类号: H01L23/367
- IPC分类号: H01L23/367 ; H01L23/00
摘要:
The present invention discloses a bonding-wire-type heat sink structure for semiconductor devices. An embodiment of the said bonding-wire-type heat sink structure comprises: a semiconductor substrate; a heat source formed on or included in the semiconductor substrate, said heat source including at least one hot spot; at least one heat conduction layer; at least one heat conductor connecting the at least one hot spot with the at least one heat conduction layer; at least one heat dissipation component in an electrically floating state; and at least one bonding wire connecting the at least one heat conduction layer with the at least one heat dissipation component, so as to transmit the heat of the heat source to the heat dissipation component.
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