- 专利标题： Functional spacer for SIP and methods for forming the same
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申请号： US14867893申请日： 2015-09-28
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公开(公告)号： US10020284B2公开(公告)日： 2018-07-10
- 发明人: Yu-Ru Chang , Chung-Kai Wang , Ming-Che Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd. , Global Unichip Corp.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L23/00 ; H01L23/13 ; H01L23/31 ; H01L25/065 ; H01L21/308 ; H01L21/78 ; H01L23/498 ; H01L23/552
摘要：
A device includes a spacer, which includes a recess extending from a top surface of the spacer into the spacer, and a conductive feature including a first portion and a second portion continuously connected to the first portion. The first portion extends into the recess. The second portion is on the top surface of the spacer. A die is attached to the spacer, and a lower portion of the first die extends into the recess.
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