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发明授权
CN1998091B 硅光电倍增器及硅光电倍增器单元 失效 - 权利终止

硅光电倍增器及硅光电倍增器单元
摘要：
本发明涉及高效率光发射检测的监测器，并可用于核技术和激光技术，以及用于工业和医学断层摄影术等。硅光电倍增器(实施例1)包括：掺杂剂浓度为1018-1020cm-3的P++导电型基片，并由多个单元构成，每个单元包含掺杂剂浓度在1018-1014cm-3范围内逐渐变化的p导电型外延层，所述外延层生长在基片上；掺杂剂浓度为1015-1017cm-3的p导电型层；掺杂剂浓度为1018-1020cm-3的n+导电型层；多晶硅电阻是在每个单元的二氧化硅层上，所述多晶硅电阻连接n+导电型层与电压分布母线，和分隔元件设置在各个单元之间。硅光电倍增器(实施例2)包括：n-导电型基片；掺杂剂浓度为1018-1020cm-3的P++导电型层，所述导电型层加到基片上，所述倍增器是由多个单元构成，多晶硅电阻是在每个单元的二氧化硅层上，和分隔元件设置在各个单元之间。
摘要（英）：

The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering and in a technical and medical tomography, etc. The inventive silicon photomultiplier (variant 1) comprises a p++-type conductivity substrate whose dope additive concentration ranges from 10<18> to 10<20> cm<-3> and which consists of cells each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 10<18> to 10<14> cm<-3> and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 10<15> to 10<17> cm<-3> and an n+-type conductivity layer whose dope additive concentration ranges from 10<18> to 10<20> cm<-3>, wherein a polysilicon resistor connecting the n+-type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between said cells. Said silicon photomultiplier (variant 2) comprises a n-type conductivity substrate to which a p++ -type conductivity layer whose dope additive concentration ranges from 10<18> to 10<20> cm<-3> is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separation elements are disposed between the cells.

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