The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280 DEG C. or more, and the bondability at 400 DEG C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %<=Sb/(Sn+Sb)<=48 wt %, 5 wt %<=Ag<20 wt %, 3 wt %<=Cu<10 wt %, and Ag+Cu<=25 wt %.