An iPVD System (200) is programmed to deposit uniform material, such as barrier material (912), into high aspect ratio nano-size features (11) on semiconductor substrates (21) using a process which enhances the sidewall (16) coverage compared to the field (10) and bottom (15) coverage(s) while minimizing or eliminating overhang (14) within a vacuum chamber (30). The iPVD system (200) is operated at low target power and high pressure >50mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.