The process provided for fabricating semiconductor image sensor using an organic coating comprises: an anti-reflection property of said organic coating at top surface and bottom surface is used to reduce the intensity of reflected light on a substrate so as to reduce the residues of substrate film generated by cross bounding of negative photoresist containing filter material due to parasitic light; meanwhile a surface developing activator contained in said organic coating is used to optimize the developing art and to reduce the residues of film on the top.