The invention discloses a screened high-tension integrated circuit, which comprises the following parts: driving device which drives the high pressure gridistor, the control device which controls the grid driving device, high dislocation and low dislocation, wherein the grid driving device is surrounded by the ring form high pressure end node structure HVJT; the high dislocation is located outside of the HVJT; the low dislocation is located in the HVJT ring form. The invention also discloses a method and device for preventing high pressure semiconductor device and the electric field distribution of the high pressure end node structure from effecting by the upper connecting line. The invention reduces the circuit surface, which carries off the parasite electric resistance.