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发明授权
CN1782142B 晶片导向器,MOCVD装置和氮化物半导体生长方法 失效 - 权利终止

晶片导向器,MOCVD装置和氮化物半导体生长方法
摘要：
本发明涉及减小III族氮化物沉积物影响的MOCVD装置用晶片导向器。晶片支架(15)包括一个或多个第一区域(15a)和围绕第一区域(15a)的第二区域(15b)。每个第一区域(15a)包括用于支撑其上沉积有氮化物半导体的晶片(19)的表面。在MOCVD设备(11)和(13)中，将晶片导向器(17)提供在晶片支架(15)第二区域(15b)上。晶片导向器(17)配备有用于覆盖第二区域(15b)的防护罩(17a)和用于接纳在第一区域(15a)上的晶片(19)的一个或多个开口(17b)。防护罩(17a)具有限定开口(17b)并引导晶片(19)的侧表面(17c)，并且将晶片(19)接纳于每个开口(17b)中。将晶片(19)装载在暴露于该开口(17b)中的每个晶片支架(15)第一区域(15a)的支撑表面上。
摘要（英）：

Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on thefirst sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).

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