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发明授权
CN1581475B 互连结构的制造方法 失效 - 权利终止 转让

互连结构的制造方法
摘要：
本发明的课题是在低介电常数膜内形成孤立通路时抑制抗蚀剂中毒的发生。在形成于衬底1上的p-SiOC膜12内形成第1布线15和第1虚设布线15a。接着，形成p-SiOC膜22，在p-SiOC膜22上形成覆盖膜23。在覆盖膜23和p-SiOC膜22内形成由与第1布线15连接的通路28和第2布线29构成的双镶嵌布线，同时在孤立的通路28的周边形成虚设通路28a。
摘要（英）：

To suppress the occurrence of the resist poisoning in forming isolated vias in a low-dielectric constant film. A first wiring 15 and a first dummy wiring 15a are formed in a p-SiOC film 12 formed on asubstrate 1. A p-SiOC film 22 is formed and a cap film 23 is formed on the p-SiOC film 22. A dual damascene wiring composed of vias 28 connected to the first wiring 15 and a second wiring 29 is formed in the cap film 23 and the p-SiOC film 22 with dummy vias 28a formed around the isolated vias 28.

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