The present invention provides a read-only memory whose storage elements are arranged in three-dimensional space. These storage elements are distributed on several storage layers respectively, and these storage layers are mutually overlapped, one layer is superposed on another layer, and on every storage layer there are several adress-selecting wires and storage elements. These storage elements maybe mask programmable of field programmable, and are arranged in the three-dimensional space, its storage density and storage capacity can be greatly raised. Said invented three-dimensional ROM is short in access time, can be made up by using standard semiconductor production process, and can be extensively used in several fields.