The invention relates to the field of power semiconductors, and provides a planar gate IGBT device with a deep trench electric field shielding structure, which is used for overcoming the problems thata current groove-gate IGBT gate with a carrier storage layer is too large in drive charges and small in short-circuit safety working region and is limited in the concentration of the CSL layer. The deep groove used for manufacturing the groove-gate IGBT channel traditionally and a P-type buried layer at the bottom portion of the groove are combined to form an electric field shielding structure toachieve clamping of the potential of the carrier storage layer; one IGBT cell is internally provided with a plurality of deep grooves to improve the concentration of the carrier storage layer of theIGBT compared to a traditional IGBT, have the higher cathode injection efficiency, and obtain the better trade-off relation of the on-state voltage and the turn-off loss. A planar gate and an electricfield shielding structure are employed, the IGBT has lower gate drive power consumption and lower saturation current density so as to improve the safety working region of the IGBT.