The invention discloses a realization manner of high-performance low-residual voltage ultrahigh-voltage arresters. The realization manner comprises measures of reducing main density, improving crystalboundary surface state density, reducing crystal grain resistivity, reducing a crystal grain size and improving crystal grain size uniformity; the measure of reducing the crystal grain resistivity isreducing a residual voltage ratio of a ZnO piezoresistor through reducing a residual voltage gradient; and the measures of reducing the main density, improving the crystal boundary surface state density, reducing the crystal grain size and improving the crystal grain size uniformity are reducing the residual voltage ratio of the ZnO piezoresistor through improving a reference voltage gradient. The realization manner has the beneficial effects of developing excellent-performance ultrahigh voltage arresters, shirting the lengths of the arresters, improving the potential distribution of the arresters and providing high-voltage gradient ZnO valve plates.