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发明公开
CN108831899A 图像传感器及形成图像传感器的方法 无效 - 撤回

图像传感器及形成图像传感器的方法
摘要：
本公开涉及一种图像传感器，包括：半导体衬底，用于在其中形成光电二极管；反射部，位于所述半导体衬底之下并覆盖所述光电二极管的至少部分，所述反射部的上表面与所述半导体衬底的下表面直接接触；以及层间电介质层，位于所述反射部之下，所述层间电介质层的上表面与所述反射部的下表面直接接触，其中，形成所述反射部的材料的折射率介于形成所述半导体衬底的材料的折射率和形成所述层间电介质层的材料的折射率之间。本公开还涉及一种形成图像传感器的方法。本公开能够提高图像传感器的性能。
摘要（英）：

The disclosure relates to an image sensor. The image sensor comprises a semiconductor substrate, a reflecting part and an interlayer dielectric layer; wherein the semiconductor substrate is used for forming a photodiode therein; the reflecting part is under the semiconductor substrate and covers at least part of the photodiode, and the upper surface of the reflecting part is directly contacted with the lower surface of the semiconductor substrate; and the interlayer dielectric layer is located below the reflecting part, and the upper surface of the interlayer dielectric layer is directly contacted with the lower surface of the reflecting part, wherein the refractive index of the material forming the reflecting part is between the refractive index of the material forming the semiconductor substrate and the refractive index of the material forming the interlayer dielectric layer. The disclosure also relates to a method for forming the image sensor. The disclosure can improve the performance of the image sensor.

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