The invention relates to a micro-generator based on a vertical nano thermocouple and a superlattice photoelectric structure. An N-type silicon wafer is used as a substrate. The light-receiving surfaceof a photocell has a textured structure, a second silicon nitride film and a back electric field structure. The superlattice structure is covered with an epitaxial monocrystalline silicon film havinga partial P-type doped region and a partial N-type doped region. A silicon dioxide passivation layer is deposited on the monocrystalline silicon film. A series of electrode contact holes are disposedon the monocrystalline silicon film and are connected with the base electrode and the emitter electrode of the photocell. A thermoelectric generator is separated from the photocell by a first siliconnitride film. An N-type polycrystalline silicon nanowire cluster vertical to the surface of the substrate and a P-type polycrystalline silicon nanowire cluster constitute the semiconductor arm of thethermocouple. A thermopile lower electrode and a thermopile upper electrode are connected in series to form a thermopile. A metal plate is located directly above the thermopile and is separated fromthe thermopile upper electrode by a third silicon nitride film.