The invention relates to a multi-wavelength semiconductor distributed feedback laser array and a fabrication method thereof. The fabrication method comprises the following steps that: a buffer layer,an active region and an optical grating layer are epitaxially grown on a substrate sequentially; optical gratings with different periods are formed in the optical grating layer through adopting the Talbot interference exposure method so as to correspond to different emission wavelengths; a cover layer and a contact layer are epitaxially grown on the optical grating layer sequentially; a ridged stage structure of the laser array is formed by means of etching; and burying is performed, and electrodes are fabricated, the preparation of the device is completed. According to the fabrication methodof the invention, photo-etching plates of different periods are adopted to design the Talbot interference exposure method, so that the fabrication of the optical gratings with different periods can becompleted through one-time exposure, and therefore, the multiple wavelengths of the semiconductor laser array can be realized, process steps are reduced, and the yield of the laser array is improved.With the multi-wavelength semiconductor distributed feedback laser array and the fabrication method thereof of the invention adopted, the multi-wavelength direct output, waveguide coupling output andthe like of the laser can be realized.