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发明公开
CN108110040A 功率半导体器件及其制造方法 无效 - 驳回

功率半导体器件及其制造方法
摘要：
本发明公开了功率半导体器件及其制造方法，其中所述功率半导体器件包括：第一半导体区域，其具有第一导电类型；至少一个第二半导体区域，设置在第一半导体区域上，并且第二半导体区域的表面与第一半导体区域的表面齐平，第二半导体区域具有与第一导电类型相反的第二导电类型；第一绝缘层，设置在第一半导体区域和第二半导体区域的表面上；第一绝缘层上对应于第二半导体区域的位置设置有至少一个开口；第二半导体区域的表面内对应于开口的位置形成有至少一个凹陷区域，凹陷区域为具有第一导电类型的半导体材料。本发明实施例所提供的功率半导体器件能够在降低表面温度的同时缩短横向电阻区的长度，从而减小功率半导体器件的尺寸。
摘要（英）：

The invention discloses a power semiconductor device and a manufacturing method thereof. The power semiconductor device comprises a first semiconductor region, at least one second semiconductor regionand a first insulating layer, wherein the first semiconductor region has a first conductivity type; the at least one second semiconductor region is disposed on the first semiconductor region, the surface of the second semiconductor region is level with the surface of the first semiconductor region, and the second semiconductor region has a second conductivity type opposite to the first conductivity type; the first insulating layer is disposed on the surfaces of the first semiconductor region and the second semiconductor region; at least one opening is formed in the first insulating layer at aposition corresponding to the second semiconductor region; and at least one recessed region is formed in the surface of the second semiconductor region at a position corresponding to the opening, andthe recessed region is a semiconductor material having a first conductivity type. The power semiconductor device provided by the invention can reduce the surface temperature and shorten the length ofa transverse resistance region at the same time, thereby reducing the size of the power semiconductor device.

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