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CN108028242A 包括附加迹线的半导体功率器件及制造半导体功率器件的方法 有权

包括附加迹线的半导体功率器件及制造半导体功率器件的方法
摘要：
提供了一种半导体功率器件(100)和一种制造半导体功率器件的方法。所述半导体功率器件包括：第一衬底(110)、第二衬底(120)、堆叠件(130)和互连结构(140，141)。第一衬底包括第一表面上的第一图案化导电层和开关半导体元件(115)。第二衬底包括面向所述第一表面的第二表面和位于第二表面上的第二图案化导电层。堆叠件包括导电迹线(132)和电介质材料层(131)。电介质材料层被设置在所述第一图案化导电层或所述该第二图案化导电层上，且所述电介质材料层将所述导电迹线与设置有所述堆叠件的所述图案化导电层隔离。所述互连结构提供所述衬底的导电层或区域的至少一个电气连接。
摘要（英）：

A semiconductor power device (100) and a method of manufacturing a semiconductor power device are provided. The semiconductor power device comprises a first substrate (110), a second substrate (120),a stack (130) and an interconnect structure (140, 141). The first substrate comprises a first patterned electrically conductive layer on a first surface and a switching semiconductor element (115). The second substrate comprises a second surface facing the first surface and a second patterned electrically conductive layer on the second surface. The stack comprises an electrically conductive track(132) and a layer (131) of a dielectric material. The layer of the dielectric material is provided on the first or second patterned electrically conductive layer and the layer of the dielectric material isolates the electrically conductive track from said patterned electrically conductive layer on which the stack is provided. The interconnect structure provides at least one electrical connection electrically conductive layers or areas of the substrates.

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