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发明公开
CN107946369A 薄膜晶体管、制备方法、检测器件、阵列基板及显示装置 有权

薄膜晶体管、制备方法、检测器件、阵列基板及显示装置
摘要：
本发明公开了一种薄膜晶体管、制备方法、检测器件、阵列基板及显示装置；薄膜晶体管包括基板，依次设置在基板上的栅极、栅极绝缘层、半导体层、源极和漏极；半导体层与栅极之间通过栅极绝缘层隔开，源极和漏极分别与半导体层连接；栅极绝缘层至少包括第一部分和第二部分；第一部分的下端面设置有栅极，第二部分的上端面设置有半导体层；第一部分的上端面或第二部分的下端面设置有凸起结构，用于使得所述栅极绝缘层的第一部分和第二部分通过凸起结构连接。所述薄膜晶体管、制备方法、检测器件、阵列基板及显示装置能够利用薄膜晶体管的电容变化特性提供基于改变电容的压力、温度等检测或者相应的显示控制功能。
摘要（英）：

The invention discloses a thin film transistor, a manufacturing method, a detection device, an array substrate and a display device. The thin film transistor comprises a substrate, a grid electrode, agrid insulating layer, a semiconductor layer, a source electrode and a drain electrode, wherein the grid electrode, the grid insulating layer, the semiconductor layer, the source electrode and the drain electrode are successively arranged on the substrate. The semiconductor layer and the grid electrode are isolated through the grid insulating layer. The source electrode and the drain electrode are connected to the semiconductor layer. The grid insulating layer at least comprises a first portion and a second portion. A lower end surface of the first portion is provided with the grid electrode.An upper end surface of the second portion is provided with the semiconductor layer. The upper end surface of the first portion or the lower end surface of the second portion is provided with an embossment structure so that the first portion and the second portion of the grid insulating layer are connected through the embossment structure. By using the thin film transistor, the manufacturing method, the detection device, the array substrate and the display device, a capacitance change characteristic of the thin film transistor can be used to provide detection based on pressure of a changeablecapacitance, a temperature and the like or a corresponding display control function.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
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