A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor materialand the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes.The optical shield prevents a first portion of image light from reaching the third photodiode.