In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23). A first electric contact layer (31) is situated directly at the first semiconductor region (21) in places. Furthermore, a second electric contact layer (32) is situated directly at the second semiconductor region (23) in places, wherein the semiconductor regions (21, 23) are energized by way of the contact layers (31, 33). Furthermore, two metallic current leads (41, 43) and an insulation layer (5) are present. The insulation layer (5) covers the second semiconductor region (23) directly in places and rises over the latter. Further, the insulation layer (5) is situated below the current lead (43) for the second semiconductor region (23). Both contact layers (31, 33) are produced from a transparent conductive oxide and the first contact layer (31) is formed directly over the second contact layer (33) and also over the insulation layer (5).