The invention relates to a bidirectional tunneling field-effect transistor with symmetric and replaceable source and drain and a manufacturing method of the bidirectional tunneling field-effect transistor. The device has horizontal symmetric structure characteristic, a second-type impurity heavy-doping source-drain replaceable region is controlled as a source region or a drain region by adjustingreplaceable electrode voltages of the source and the drain, and a tunneling current direction is changed. The bidirectional tunneling field-effect transistor has the advantages of low static power consumption, high forward-reverse current ratio, low reverse leakage current characteristic and low sub-threshold amplitude, and the bidirectional switching function can be achieved; compared with a conventional MOSFETs device, the bidirectional tunneling field-effect transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the bidirectional tunneling field-effect transistor has bidirectional and symmetric switch characteristic that the source and the drain can be replaced with each other and is not possessed by the conventional tunneling field-effect transistor, and thus, the bidirectional tunneling field-effect transistor is suitable for promotion and application.