The invention discloses a pressure sensing device. The pressure sensing device comprises a first substrate, a thin film transistor element, a first sensing element, a second sensing element and a compressible layer. The thin film transistor element is formed on a first surface of the first substrate. The first sensing element is formed on a second surface of the first substrate, and the second surface and the first surface are opposite to each other. The second sensing element and the first sensing element are arranged oppositely and located on the same side of the first substrate. The compressible layer is arranged between the first sensing element and the second sensing element. In this way, the pressure sensing device can judge a pressed position and pressing strength according to capacitance variation and meanwhile can generate different control functions according to the pressing strength. Meanwhile, the invention furthermore discloses a manufacturing method of the pressure sensing device.