知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN106920802B 薄膜晶体管基板和使用该薄膜晶体管基板的显示器 有权

薄膜晶体管基板和使用该薄膜晶体管基板的显示器
摘要：
本发明涉及到薄膜晶体管基板和使用该薄膜晶体管基板的显示器。本发明提出了一种薄膜晶体管基板，包括：第一薄膜晶体管；第二薄膜晶体管；第一存储电容器电极；氧化物层，覆盖所述第一薄膜晶体管和所述第二薄膜晶体管，并暴露出第一存储电容器电极；在所述氧化物层上且覆盖所述第一存储电容器电极的氮化物层；在所述氮化物层上的第二存储电容器电极，其中所述第二电容器电极与所述第一存储电容器电极交叠；覆盖所述第一薄膜晶体管、所述第二薄膜晶体管和所述第二存储电容器电极的平坦层；和在所述平坦层上的像素电极公开。
摘要（英）：

The present disclosure relates to a thin film transistor substrate having two different type thin film transistors on the same substrate, and a display using the same. The present disclosure suggests a thin film transistor substrate comprising: a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposing the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开/授权文献
0/0