Disclosed is a method for cleaning a vacuum pipeline of a single crystal furnace. The method comprises the steps that when crystal growth heating is conducted, gas containing oxygen is fed into the vacuum pipeline, the gas containing oxygen and SiOx adhering to the inner wall of the vacuum pipeline undergo a combustion reaction, and powdery substances are obtained and discharged from the vacuum pipeline in a pumping mode. The method for cleaning the vacuum pipeline of the single crystal furnace prevents the vacuum pipeline from being blocked, and facilitates long-time continuous crystal growth operation, and therefore the production efficiency is improved.