知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN106887384A 掺杂剂组合物、掺杂剂注入层和掺杂层的形成方法 有权

掺杂剂组合物、掺杂剂注入层和掺杂层的形成方法
摘要：
本发明的第1方面提供表面凹凸少、连续性高的硅层形成于基材上的半导体层合体的制造方法。本发明的第1方面的制造具有基材10和基材上的烧结硅粒子层5的半导体层合体的方法包含以下工序：(a)将含有分散介质和分散于分散介质中的硅粒子的硅粒子分散体涂布在基材10上，形成硅粒子分散体层1的工序；(b)将硅粒子分散体层1干燥，形成未烧结硅粒子层2的工序；(c)在未烧结硅粒子层上层合光透射性层3的工序；以及(d)穿过光透射性层3对未烧结硅粒子层2照射光，使构成未烧结硅粒子层2的硅粒子烧结，由此形成烧结硅粒子层5的工序。
摘要（英）：

A first aspect of the present invention provides a method for producing a semiconductor laminate comprising a substrate having formed thereon a silicon layer with small surface unevenness and high continuity. The method of the first aspect of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate comprises (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5.

公开/授权文献
0/0