The invention provides a graphic photomask contact hole defect detection method which comprises the following steps: photoetching a graphic photomask by using electron beams, and scanning the formed contact holes; performing integrated weight calculation on the electron quantity returned by each contact hole and the exposure condition in which each contact hole is positioned during scanning, determining the number G of to-be-found graphic photomask contact hole defects according to the process precision, and marking the previous G contact holes with the highest score as defective contact holes, wherein the defects of the contact holes at the corresponding positions on the graphic photomask refer to the graphic photomask contact hole defects. According to the method, the graphic photomask needs to be exposed once only, is scanned on a wafer by using the electron beams, and then can be input into corresponding analysis software for calculation, and the operation is simple and convenient. Moreover, because weight analysis calculation is performed and the exposure condition is also considered, the detection accuracy is greatly improved.