The invention discloses a high-frequency structure for a dielectric-embedded zigzag metal band. A dielectric substrate of a microstrip high-frequency structure is replaced with a dielectric support bar having the same change period as the zigzag metal band, and the dielectric supporting rod portion is partially embedded in a zigzag metal band. The exposure area of the dielectric-oriented electron beam is greatly reduced, and the dielectric support rod part is partially embedded in the zigzag metal band, which further reduces the exposed area of the dielectric, thereby reducing the probability of the electron bombardment to a dielectric substrate and avoiding the charge accumulation effect. In order to insert the dielectric support rod into the zigzag metal band, a metal band which is thicker than a zigzag metal band printed on the dielectric substrate is employed. Because of the increase of thickness, the zigzag metal band can bear electron bombardment. Structural stability is increased, and better thermal conductivity is ensured. In addition, the high-frequency structure has a wider cold bandwidth and a higher coupling impedance as compared with a conventional planar microstrip high frequency structure composed of a dielectric substrate and a zigzag metal strip.