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CN105977356A 一种具有复合电子阻挡层结构的紫外发光二极管 有权

  • Patent Title: 一种具有复合电子阻挡层结构的紫外发光二极管
  • Patent Title (English): UV light emitting diode with compound electronic barrier layer structure
  • Application No.: CN201610327711.9
    Application Date: 2016-05-17
  • Publication No.: CN105977356A
    Publication Date: 2016-09-28
  • Inventor: 张雄 , 梁宗文 , 崔一平
  • Applicant: 东南大学
  • Applicant Address: 江苏省南京市四牌楼2号
  • Assignee: 东南大学
  • Current Assignee: 东南大学
  • Current Assignee Address: 江苏省南京市四牌楼2号
  • Agency: 南京苏高专利商标事务所
  • Agent 柏尚春
  • Main IPC: H01L33/14
  • IPC: H01L33/14
一种具有复合电子阻挡层结构的紫外发光二极管
Abstract:
本发明公开了一种具有复合电子阻挡层结构的紫外发光二极管，该发光二极管自下而上依次包括衬底(101)、低温AlN成核层(102)、高温AlN缓冲层(103)、n型AlGaN层(104)、AlxGa1‑xN/AlyGa1‑yN多量子阱有源区(105)、由p‑AlsIntGa1‑s‑tN层(1061)和p‑AlzGa1‑zN层(1062)组成的p‑AlsIntGa1‑s‑tN/p‑AlzGa1‑zN复合电子阻挡层(106)。本发明可解决传统的电子阻挡层结构在最后一个量子阱势垒和电子阻挡层之间会形成寄生电子反型层的问题。
Abstract(English):

The invention discloses a UV light emitting diode with a compound electronic barrier layer structure. The light emitting diode, successively from the bottom to the top, includes a substrate (101), a low-temperature AlN nucleation layer (102), a high-temperature AlN buffer layer (103), an n type AlGaN layer (104), an AlGa<1-x>N/AlGa<1-y>N multi-quantum well active region (105), and a p-AlsIntGa1-s-tN/p-AlzGa1-zN compound electronic barrier layer (106) consisting of a p-AlInGa<1-s-t> layer (106) and a p-AlGa<1-z>N layer. The diode provided can solve the problem that a conventional electronic barrier layer structure generates a parasitic electronic inversion layer between the last quantum well barrier and an electronic barrier layer.

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