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发明公开
CN105938785A 用于用RF产生器操作以控制等离子体工艺的阻抗匹配电路 有权

用于用RF产生器操作以控制等离子体工艺的阻抗匹配电路
摘要：
本发明涉及用于用RF产生器操作以控制等离子体工艺的阻抗匹配电路，描述了一种阻抗匹配电路(IMC)。所述阻抗匹配电路包括第一电路。第一电路具有耦合到千赫(kHz)射频(RF)产生器的输入。IMC包括第二电路。所述第二电路具有耦合到低频兆赫(MHz)RF产生器的输入。IMC包括第三电路。所述第三电路具有耦合到高频MHz RF产生器的输入。IMC包括第一、第二和第三电路的耦合到RF传输线的输入的输出。第一电路和第二电路提供通过第一电路发送的kHz RF信号和通过第二电路发送的低频MHz RF信号之间的隔离。
摘要（英）：

The invention relates to an impedance matching circuit for operation with a kilohertz RF generator to control plasma processes. An impedance matching circuit (IMC) is described. The impedance matching circuit includes a first circuit. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The IMC includes a second circuit. The second circuit has an input coupled to a low frequency megahertz (MHz) RF generator. The IMC includes a third circuit. The third circuit has an input coupled to a high frequency MHz RF generator. The IMC includes an output of the first, second, and third circuits coupled to an input of an RF transmission line. The first circuit and the second circuit provide isolation between a kHz RF signal sent through the first circuit and a low frequency MHz RF signal sent through the second circuit.

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