The invention provides a driving device and method for IGBT (Insulated Gate Bipolar Transistor) junction temperature estimation. The device comprises an IGBT module to be tested, a constant current source driving module and a gate turn-on Miller platform, wherein the constant current source driving module is used for extracting a temperature sensing electric parameter from a gate turn-on voltage by changing gate turn-on current; the gate turn-on Miller platform is used for estimating an IGBT junction temperature under constant current source driving; the constant current source driving module comprises a push-pull driving circuit and a constant current source circuit; and when a driving pulse width signal is at a high level, a voltage of the constant current source driving module is stabilized at a fixed value. Through adoption of the driving device and method for the IGBT junction temperature estimation, the gate turn-on current can be rapidly stabilized at a constant value, so that duration of the Miller platform in a gate turn-on voltage waveform is longer than that of the Miller platform in conventional driving, and temperature sensitivity and temperature linearity are enhanced greatly. Moreover, a junction temperature of the IGBT module can be measured rapidly and accurately on the premise of not damaging a module structure; a high response speed is achieved; and a test process is simple.