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发明公开
CN105788752A 电致发光激励临界转变温度提高的MgB2基超导体及其制备方法 失效 - 权利终止

电致发光激励临界转变温度提高的MgB2基超导体及其制备方法
摘要：
本发明涉及电致发光激励临界转变温度提高的MgB2基超导体及其制备方法，利用Y2O3:Eu3+发光体异位掺杂改变MgB2超导体临界转变温度。本发明采用水热法制备了两种不同发光强度的掺杂剂Y2O3:Eu3+Ⅰ和Y2O3:Eu3+II纳米棒，异位掺杂法制备Y2O3:Eu3+发光体掺杂的MgB2基超导体。Y2O3:Eu3+发光体所占质量分数为1％和2％。随着掺杂剂发光强度的增加，MgB2基超导体的Tc值不断增加。在无外界磁场的条件下，当用发光强度高的Y2O3:Eu3+II发光体作为掺杂剂，且掺杂浓度为2％时，MgB2基超导体的Tc＝35.9K较纯MgB2的Tc＝35.8K高。
摘要（英）：

The invention relates to an MgB2-based superconductor with increased critical transition temperature through electroluminescent excitation and a preparation method thereof. The critical transition temperature of the MgB2-based superconductor is changed through ectopic doping of Y2O3:Eu<3+> luminous bodies. Two doping agents of different luminous intensity, namely, Y2O3:Eu<3+>I and Y2O3:Eu<3+>II nano-rods, are prepared through a hydrothermal method, and an MgB2-based superconductor doped with Y2O3:Eu<3+> luminous bodies is prepared through an ectopic doping method. The mass fraction of the Y2O3:Eu<3+> luminous bodies is 1% and 2%. As the luminous intensities of the doping agents increase, the Tc value of the MgB2-based superconductor increases constantly. In the absence of an external magnetic field, when the Y2O3:Eu<3+>II luminous body of high luminous intensity is used as the doping agent and the doping concentration is 2%, Tc of the MgB2-based superconductor is 35.9K, which is higher than Tc (35.8K) of pure MgB2.

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