The invention discloses an acid washing and centrifugal dewatering technique of silicon carbide, which comprises the following steps: 1) adding clear water into an acid washing drum, starting a stirrer, and adding a to-be-washed silicon carbide abrasive-sodium hydroxide mixture; 2) while keeping stirring, adding a concentrated acid solution until the acid concentration in the drum is 8-12%; 3) continuing stirring, introducing steam until the water temperature reaches 70-80 DEG C, and boiling for 2-3 hours; 4) flushing with clear water for 2-4 hours; and 5) carrying out centrifugal dewatering at the rate of 2000-3000 r/min for 50-70 seconds. The technique can ensure the continuous production of the silicon carbide abrasive.