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发明授权
CN105609601B 具有新型量子阱的发光二极管外延片及其制备方法 有权

具有新型量子阱的发光二极管外延片及其制备方法
摘要：
本发明公开了一种具有新型量子阱的发光二极管外延片及其制备方法，属于发光二极管领域。所述发光二极管外延片包括：衬底，以及依次覆盖在衬底上的u型GaN层、N型GaN层、多量子阱有源层和P型GaN载流子层，多量子阱有源层包括交替生长的M+N个量子阱层和M+N个量子垒层，量子阱层为InGaN阱层，量子垒层为GaN垒层；M+N个量子阱层中靠近N型GaN层的M个量子阱层的厚度逐渐变化，且在M+N个量子阱层中靠近N型GaN层的M个量子阱层中，靠近N型GaN层的量子阱层的厚度大于靠近P型GaN载流子层的量子阱层的厚度，M+N个量子阱层中靠近P型GaN载流子层的N个量子阱层的厚度均小于M个量子阱层的厚度，M和N均为大于1的正整数，且M与N的差值为0。
摘要（英）：

The invention discloses a light-emitting diode epitaxial wafer with novel quantum wells and a preparation method of the light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diodes. The light-emitting diode epitaxial wafer comprises a substrate, a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer and a P-type GaN current carrier layer, wherein the u-type GaN layer, the N-type GaN layer, the multi-quantum well active layer and the P-type GaN current carrier layer sequentially cover the substrate; the multi-quantum well active layer comprises M+N quantum well layers and M+N quantum barrier layers, which alternately grow; each quantum well layer is an InGaN well layer; each quantum barrier layer is a GaN barrier layer; the thicknesses of M quantum well layers, close to the N-type GaN layer, in the M+N quantum well layers are gradually changed; in the M quantum well layers, close to the N-type GaN layer, in the M+N quantum well layers, the thicknesses of the quantum well layers close to the N-type GaN layer are greater than those of the quantum well layers close to the P-type GaN current carrier layer; the thicknesses of the N quantum well layers, close to the P-type GaN current carrier layer, in the M+N quantum well layers are smaller than those of M quantum well layers; M and N are positive integers greater than 1; and the difference value between the M and the N is 0 or 1.

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