An n−-type semiconductor substrate (1) includes an active region and a terminal region disposed outside the active region. A p+-type anode layer (2) is formed in a portion of an upper surface of the n−-type semiconductor substrate (1) in the active region. A plurality of p+-type guard ring layers (3) are formed in a portion of the upper surface of the n−-type semiconductor substrate (1) in the terminal region. An n+-type cathode layer (5) is formed in a lower surface of the n−-type semiconductor substrate (1). An anode electrode (6) is connected to the p+-type anode layer (2). A metallic cathode electrode (7) is connected to the n+-type cathode layer (5). A recess (8) is formed by trenching the n+-type cathode layer (5) in the terminal region. The cathode electrode (7) is also formed in the recess (8).