The present disclosure relates to a solid-state imaging element capable of generating a high-accuracy imaging signal with a large dynamic range, and to an electronic device. The pixels include high-sensitivity pixels and low-sensitivity pixels less sensitive than the high-sensitivity pixels. A control gate controls the potential of the photoelectric conversion elements in the low-sensitivity pixels. The present disclosure can be applied, for example, to CMOS image sensors that include high-sensitivity pixels and low-sensitivity pixels less sensitive than the high-sensitivity pixels and that control the potential of the photoelectric conversion elements in the low-sensitivity pixels.