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发明授权
CN105307975B 互补金属氧化物半导体(CMOS)超声换能器及其形成方法 有权

互补金属氧化物半导体(CMOS)超声换能器及其形成方法
摘要：
描述了互补金属氧化物半导体(CMOS)超声换能器(CUT)及用于形成CUT的方法。CUT可以包括单片集成的超声换能器和用于与该换能器一起工作的集成电路。CUT可以用在超声装置，例如，超声成像装置和/或高强度聚焦超声(HIFU)装置中。
摘要（英）：

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

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